Correlation between Physical Defects and Performance in AlGaN/GaN High Electron Mobility Transistor Devices
نویسندگان
چکیده
منابع مشابه
Atomic layer deposition of Sc2O3 for passivating AlGaN/GaN high electron mobility transistor devices
mobility transistor devices Xinwei Wang, Omair I. Saadat, Bin Xi, Xiabing Lou, Richard J. Molnar, Tom as Palacios, and Roy G. Gordon Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138, USA Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA School of Engineering and Ap...
متن کاملcohesion and cohesive devices in a contrastive analysis between ge and esp texts
the present study was an attempt to conduct a contrastive analysis between general english (ge) and english for specific purposes (esp) texts in terms of cohesion and cohesive devices. to this end, thirty texts from different esp and ge textbooks were randomly selected. then they were analyzed manually to find the frequency of cohesive devices. cohesive devices include reference, substitution, ...
15 صفحه اولSurface morphology of Al0.3Ga0.7N/Al2O3-high electron mobility transistor structure.
We present surface properties of buffer films (AIN and GaN) and Al0.3Gao.zN/Al2O3-High Electron Mobility Transistor (HEMT) structures with/without AIN interlayer grown on High Temperature (HT)-AIN buffer/Al2O3 substrate and Al2O3 substrate. We have found that the GaN surface morphology is step-flow in character and the density of dislocations was about 10(8)-10(9) cm(-2). The AFM measurements a...
متن کاملHydrogen sensing properties of a metamorphic high electron mobility transistor
transistor Tsung-Han Tsai, Huey-Ing Chen, Chung-Fu Chang, Po-Shun Chiu, Yi-Chun Liu, Li-Yang Chen, Tzu-Pin Chen, and Wen-Chau Liu Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan, Taiwan 70101, Republic of China Department of Chemical Engineering, National Cheng-Kung University, 1 University Road, Tainan, Taiwan 70101...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Transactions on Electrical and Electronic Materials
سال: 2010
ISSN: 1229-7607
DOI: 10.4313/teem.2010.11.2.049